Abstract
Gallium oxide is a wide-bandgap compound semiconductor material renowned for its diverse applications spanning gas sensors, liquid crystal displays, transparent electrodes, and ultraviolet detectors. This paper details the aerosol assisted chemical vapor deposition synthesis of tin doped gallium oxide thin films using gallium acetylacetonate and monobutyltin trichloride dissolved in methanol. It was observed that Sn doping resulted in a reduction in the transmittance of Ga2O3 films within the visible spectrum, while preserving the wide bandgap characteristics of 4.8 eV. Furthermore, Hall effect testing revealed a substantial decrease in the resistivity of Sn-doped Ga2O3 films, reducing it from 4.2 × 106 Ω cm to 2 × 105 Ω cm for the 2.5 at. % Sn:Ga2O3 compared to the nominally undoped Ga2O3.
| Original language | English |
|---|---|
| Pages (from-to) | 6085-6091 |
| Number of pages | 7 |
| Journal | ACS Applied Electronic Materials |
| Volume | 6 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 12 Aug 2024 |
Bibliographical note
Publisher Copyright:© 2024 The Authors. Published by American Chemical Society.