Defect formation in In2O3 and SnO2: a new atomistic approach based on accurate lattice energies

Keyphrases

• Indium Oxide 100%
• Defect Formation 100%
• SnO2 100%
• Atomistic Approach 100%
• Lattice Energy 100%
• Transparent Conducting Oxide 66%
• Force Field 66%
• Binary Compounds 33%
• Optoelectronic Applications 33%
• Indium 33%
• Free Electrons 33%
• Dopant 33%
• Tin Dioxide 33%
• Charge Neutrality 33%
• Charged Point Defects 33%
• Oxygen Vacancy Formation Energy 33%
• Hole Polaron 33%
• Oxygen Interstitials 33%
• Oxide Systems 33%
• Defect Properties 33%
• Electron Polaron 33%
• Free Hole 33%
• Bixbyite 33%
• Interstitial Site 33%
• Atomic Force 33%
• Sesquioxides 33%
• Tin-doped Indium Oxide 33%
• Defect Calculations 33%
• Defective Crystals 33%
• Solid Solution 33%

Material Science

• Transparent Conducting Oxide 100%
• Indium 100%
• Point Defect 100%
• Indium Tin Oxide 100%
• Oxide Compound 50%
• Tin 50%
• Doping (Additives) 50%
• Tin Dioxide 50%
• Oxygen Vacancy 50%
• Solid Solutions 50%