Growth and properties of GaSbBi alloys

M. K. Rajpalke; W. M. Linhart; M. Birkett; K. M. Yu; D. O. Scanlon; J. Buckeridge; T. S. Jones; M. J. Ashwin; T. D. Veal

doi:10.1063/1.4824077

Growth and properties of GaSbBi alloys

M. K. Rajpalke, W. M. Linhart, M. Birkett, K. M. Yu, D. O. Scanlon, J. Buckeridge, T. S. Jones, M. J. Ashwin, T. D. Veal

Research output: Contribution to journal › Article › peer-review

92 Citations (Scopus)

Abstract

Molecular-beam epitaxy has been used to grow GaSb_1- _xBi_x alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98 of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb _0.95Bi_0.05, corresponding to a reduction of 36 meV/Bi or 210 meV per 0.01 Å change in lattice constant.

Original language	English
Article number	142106
Journal	Applied Physics Letters
Volume	103
Issue number	14
DOIs	https://doi.org/10.1063/1.4824077
Publication status	Published - 30 Sept 2013
Externally published	Yes

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title = "Growth and properties of GaSbBi alloys",

abstract = "Molecular-beam epitaxy has been used to grow GaSb1- xBix alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98 of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb 0.95Bi0.05, corresponding to a reduction of 36 meV/Bi or 210 meV per 0.01 {\AA} change in lattice constant.",

author = "Rajpalke, {M. K.} and Linhart, {W. M.} and M. Birkett and Yu, {K. M.} and Scanlon, {D. O.} and J. Buckeridge and Jones, {T. S.} and Ashwin, {M. J.} and Veal, {T. D.}",

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AU - Rajpalke, M. K.

AU - Linhart, W. M.

AU - Birkett, M.

AU - Yu, K. M.

AU - Scanlon, D. O.

AU - Buckeridge, J.

AU - Jones, T. S.

AU - Ashwin, M. J.

AU - Veal, T. D.

PY - 2013/9/30

Y1 - 2013/9/30

N2 - Molecular-beam epitaxy has been used to grow GaSb1- xBix alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98 of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb 0.95Bi0.05, corresponding to a reduction of 36 meV/Bi or 210 meV per 0.01 Å change in lattice constant.

AB - Molecular-beam epitaxy has been used to grow GaSb1- xBix alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98 of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb 0.95Bi0.05, corresponding to a reduction of 36 meV/Bi or 210 meV per 0.01 Å change in lattice constant.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Growth and properties of GaSbBi alloys

Abstract

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