Highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition

S.D. Ponja; S. Sathasivam; I.P. Parkin; C.J. Carmalt

doi:10.1038/s41598-020-57532-7

Highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition

S.D. Ponja, S. Sathasivam, I.P. Parkin, C.J. Carmalt

Chemical and Energy Engineering

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Abstract

Degenerately doped ZnO is seen as a potential substitute to the ubiquitous and expensive Sn doped In ₂O ₃ as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO thin films were grown via aerosol assisted chemical vapor deposition. The lowest resistivity (7.8 × 10 ⁻⁴ Ω.cm) and highest carrier concentration (4.23 × 10 ²⁰ cm ⁻³) ever reported for AACVD grown ZnO: Ga was achieved due to using oxygen poor growth conditions enabled by diethylzinc and triethylgallium precursors.

Original language	English
Article number	638
Journal	Scientific Reports
Volume	10
Issue number	1
DOIs	https://doi.org/10.1038/s41598-020-57532-7
Publication status	Published - 1 Dec 2020

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Publisher Copyright:
© 2020, The Author(s).

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Cite this

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abstract = "Degenerately doped ZnO is seen as a potential substitute to the ubiquitous and expensive Sn doped In 2O 3 as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO thin films were grown via aerosol assisted chemical vapor deposition. The lowest resistivity (7.8 × 10 −4 Ω.cm) and highest carrier concentration (4.23 × 10 20 cm −3) ever reported for AACVD grown ZnO: Ga was achieved due to using oxygen poor growth conditions enabled by diethylzinc and triethylgallium precursors.",

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N2 - Degenerately doped ZnO is seen as a potential substitute to the ubiquitous and expensive Sn doped In 2O 3 as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO thin films were grown via aerosol assisted chemical vapor deposition. The lowest resistivity (7.8 × 10 −4 Ω.cm) and highest carrier concentration (4.23 × 10 20 cm −3) ever reported for AACVD grown ZnO: Ga was achieved due to using oxygen poor growth conditions enabled by diethylzinc and triethylgallium precursors.

AB - Degenerately doped ZnO is seen as a potential substitute to the ubiquitous and expensive Sn doped In 2O 3 as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO thin films were grown via aerosol assisted chemical vapor deposition. The lowest resistivity (7.8 × 10 −4 Ω.cm) and highest carrier concentration (4.23 × 10 20 cm −3) ever reported for AACVD grown ZnO: Ga was achieved due to using oxygen poor growth conditions enabled by diethylzinc and triethylgallium precursors.

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