Improved CuSCN-ZnO diode performance with spray deposited CuSCN

S. M. Hatch; J. Briscoe; S. Dunn

doi:10.1016/j.tsf.2012.12.114

Improved CuSCN-ZnO diode performance with spray deposited CuSCN

S. M. Hatch, J. Briscoe, S. Dunn

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

P-type copper(I) thiocyanate (β-CuSCN) was deposited using a pneumatic micro-spray gun from a saturated solution in propyl sulphide. An as-produced 6 μm CuSCN film exhibited a hole mobility of 70 cm ²/V·s and conductivity of 0.02 S·m^-1. A zinc oxide (ZnO) nanorod array was filled with CuSCN, demonstrating the capability of the process for filling nanostructured materials. This produced a diode with a n-type ZnO and p-type CuSCN junction. The best performing diodes exhibited rectifications of 3550 at ± 3 V. The electronic characteristics exhibited by the diode were attributed to a compact grain structure of the β-CuSCN giving increased carrier mobility and an absence of cracks preventing electrical shorts between electrode contacts that are typically associated with β-CuSCN films.

Original language	English
Pages (from-to)	404-407
Number of pages	4
Journal	Thin Solid Films
Volume	531
DOIs	https://doi.org/10.1016/j.tsf.2012.12.114
Publication status	Published - 7 Jan 2013
Externally published	Yes

Keywords

Diodes
Hexagonal copper thiocyanate
Impregnation
Nanorods
Spray deposition
Zinc oxide

Access to Document

10.1016/j.tsf.2012.12.114

Cite this

@article{8f25989ce5cb49f0b8e38117f527fb37,

title = "Improved CuSCN-ZnO diode performance with spray deposited CuSCN",

abstract = "P-type copper(I) thiocyanate (β-CuSCN) was deposited using a pneumatic micro-spray gun from a saturated solution in propyl sulphide. An as-produced 6 μm CuSCN film exhibited a hole mobility of 70 cm 2/V·s and conductivity of 0.02 S·m-1. A zinc oxide (ZnO) nanorod array was filled with CuSCN, demonstrating the capability of the process for filling nanostructured materials. This produced a diode with a n-type ZnO and p-type CuSCN junction. The best performing diodes exhibited rectifications of 3550 at ± 3 V. The electronic characteristics exhibited by the diode were attributed to a compact grain structure of the β-CuSCN giving increased carrier mobility and an absence of cracks preventing electrical shorts between electrode contacts that are typically associated with β-CuSCN films.",

keywords = "Diodes, Hexagonal copper thiocyanate, Impregnation, Nanorods, Spray deposition, Zinc oxide",

author = "Hatch, {S. M.} and J. Briscoe and S. Dunn",

year = "2013",

month = jan,

day = "7",

doi = "10.1016/j.tsf.2012.12.114",

language = "English",

volume = "531",

pages = "404--407",

}

TY - JOUR

T1 - Improved CuSCN-ZnO diode performance with spray deposited CuSCN

AU - Hatch, S. M.

AU - Briscoe, J.

AU - Dunn, S.

PY - 2013/1/7

Y1 - 2013/1/7

N2 - P-type copper(I) thiocyanate (β-CuSCN) was deposited using a pneumatic micro-spray gun from a saturated solution in propyl sulphide. An as-produced 6 μm CuSCN film exhibited a hole mobility of 70 cm 2/V·s and conductivity of 0.02 S·m-1. A zinc oxide (ZnO) nanorod array was filled with CuSCN, demonstrating the capability of the process for filling nanostructured materials. This produced a diode with a n-type ZnO and p-type CuSCN junction. The best performing diodes exhibited rectifications of 3550 at ± 3 V. The electronic characteristics exhibited by the diode were attributed to a compact grain structure of the β-CuSCN giving increased carrier mobility and an absence of cracks preventing electrical shorts between electrode contacts that are typically associated with β-CuSCN films.

AB - P-type copper(I) thiocyanate (β-CuSCN) was deposited using a pneumatic micro-spray gun from a saturated solution in propyl sulphide. An as-produced 6 μm CuSCN film exhibited a hole mobility of 70 cm 2/V·s and conductivity of 0.02 S·m-1. A zinc oxide (ZnO) nanorod array was filled with CuSCN, demonstrating the capability of the process for filling nanostructured materials. This produced a diode with a n-type ZnO and p-type CuSCN junction. The best performing diodes exhibited rectifications of 3550 at ± 3 V. The electronic characteristics exhibited by the diode were attributed to a compact grain structure of the β-CuSCN giving increased carrier mobility and an absence of cracks preventing electrical shorts between electrode contacts that are typically associated with β-CuSCN films.

KW - Diodes

KW - Hexagonal copper thiocyanate

KW - Impregnation

KW - Nanorods

KW - Spray deposition

KW - Zinc oxide

U2 - 10.1016/j.tsf.2012.12.114

DO - 10.1016/j.tsf.2012.12.114

M3 - Article

AN - SCOPUS:84875462416

SN - 0040-6090

VL - 531

SP - 404

EP - 407

JO - Thin Solid Films

JF - Thin Solid Films

ER -