InGaN/GaN Multiple Quantum Well Photoanode Modified with Cobalt Oxide for Water Oxidation

M. Alqahtani; S. Sathasivam; A. Alhassan; F. Cui; S. Benjaber; C. Blackman; B. Zhang; Y. Qin; I.P. Parkin; S. Nakamura; H. Liu; J. Wu

doi:10.1021/acsaem.8b01387

InGaN/GaN Multiple Quantum Well Photoanode Modified with Cobalt Oxide for Water Oxidation

M. Alqahtani, S. Sathasivam, A. Alhassan, F. Cui, S. Benjaber, C. Blackman, B. Zhang, Y. Qin, I.P. Parkin, S. Nakamura, H. Liu, J. Wu

Chemical and Energy Engineering

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Indium gallium nitride (InGaN) is an attractive semiconductor, with a tunable direct bandgap for photoelectrochemical water splitting, but it corrodes in aqueous electrolytes. Cobalt oxide (CoOx) is a promising cocatalyst to protect photoelectrodes and accelerate the charge transfer. CoOx is earth-abundant and stable in extremely alkaline conditions and shows high activity for the oxygen evolution reaction (OER). In this work, we demonstrate that CoOx directly deposited onto InGaN/GaN multiple quantum well photoanodes exhibits excellent activity and stability in a strong alkaline electrolyte, 1 M NaOH (pH = 13.7), for water oxidation up to 28 h, while a reference sample without the catalyst degraded rapidly in the alkaline electrolyte. Under simulated solar illumination, the CoOx-modified InGaN/GaN quantum well photoanode showed a high photocurrent density of 1.26 mA cm–2 at 1.23 V and an onset potential of −0.03 V versus a reversible hydrogen electrode.

Original language	English
Pages (from-to)	6417–6424
Journal	ACS Applied Energy Materials
Volume	1
Issue number	11
DOIs	https://doi.org/10.1021/acsaem.8b01387
Publication status	Published - 29 Oct 2018

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10.1021/acsaem.8b01387

Cite this

@article{209bff89d1a24b538ce36cebb543a564,

title = "InGaN/GaN Multiple Quantum Well Photoanode Modified with Cobalt Oxide for Water Oxidation",

abstract = "Indium gallium nitride (InGaN) is an attractive semiconductor, with a tunable direct bandgap for photoelectrochemical water splitting, but it corrodes in aqueous electrolytes. Cobalt oxide (CoOx) is a promising cocatalyst to protect photoelectrodes and accelerate the charge transfer. CoOx is earth-abundant and stable in extremely alkaline conditions and shows high activity for the oxygen evolution reaction (OER). In this work, we demonstrate that CoOx directly deposited onto InGaN/GaN multiple quantum well photoanodes exhibits excellent activity and stability in a strong alkaline electrolyte, 1 M NaOH (pH = 13.7), for water oxidation up to 28 h, while a reference sample without the catalyst degraded rapidly in the alkaline electrolyte. Under simulated solar illumination, the CoOx-modified InGaN/GaN quantum well photoanode showed a high photocurrent density of 1.26 mA cm–2 at 1.23 V and an onset potential of −0.03 V versus a reversible hydrogen electrode.",

author = "M. Alqahtani and S. Sathasivam and A. Alhassan and F. Cui and S. Benjaber and C. Blackman and B. Zhang and Y. Qin and I.P. Parkin and S. Nakamura and H. Liu and J. Wu",

year = "2018",

month = oct,

day = "29",

doi = "10.1021/acsaem.8b01387",

language = "English",

volume = "1",

pages = "6417–6424",

number = "11",

}

TY - JOUR

T1 - InGaN/GaN Multiple Quantum Well Photoanode Modified with Cobalt Oxide for Water Oxidation

AU - Alqahtani, M.

AU - Sathasivam, S.

AU - Alhassan, A.

AU - Cui, F.

AU - Benjaber, S.

AU - Blackman, C.

AU - Zhang, B.

AU - Qin, Y.

AU - Parkin, I.P.

AU - Nakamura, S.

AU - Liu, H.

AU - Wu, J.

PY - 2018/10/29

Y1 - 2018/10/29

N2 - Indium gallium nitride (InGaN) is an attractive semiconductor, with a tunable direct bandgap for photoelectrochemical water splitting, but it corrodes in aqueous electrolytes. Cobalt oxide (CoOx) is a promising cocatalyst to protect photoelectrodes and accelerate the charge transfer. CoOx is earth-abundant and stable in extremely alkaline conditions and shows high activity for the oxygen evolution reaction (OER). In this work, we demonstrate that CoOx directly deposited onto InGaN/GaN multiple quantum well photoanodes exhibits excellent activity and stability in a strong alkaline electrolyte, 1 M NaOH (pH = 13.7), for water oxidation up to 28 h, while a reference sample without the catalyst degraded rapidly in the alkaline electrolyte. Under simulated solar illumination, the CoOx-modified InGaN/GaN quantum well photoanode showed a high photocurrent density of 1.26 mA cm–2 at 1.23 V and an onset potential of −0.03 V versus a reversible hydrogen electrode.

AB - Indium gallium nitride (InGaN) is an attractive semiconductor, with a tunable direct bandgap for photoelectrochemical water splitting, but it corrodes in aqueous electrolytes. Cobalt oxide (CoOx) is a promising cocatalyst to protect photoelectrodes and accelerate the charge transfer. CoOx is earth-abundant and stable in extremely alkaline conditions and shows high activity for the oxygen evolution reaction (OER). In this work, we demonstrate that CoOx directly deposited onto InGaN/GaN multiple quantum well photoanodes exhibits excellent activity and stability in a strong alkaline electrolyte, 1 M NaOH (pH = 13.7), for water oxidation up to 28 h, while a reference sample without the catalyst degraded rapidly in the alkaline electrolyte. Under simulated solar illumination, the CoOx-modified InGaN/GaN quantum well photoanode showed a high photocurrent density of 1.26 mA cm–2 at 1.23 V and an onset potential of −0.03 V versus a reversible hydrogen electrode.

U2 - 10.1021/acsaem.8b01387

DO - 10.1021/acsaem.8b01387

M3 - Article

SN - 2574-0962

VL - 1

SP - 6417

EP - 6424

JO - ACS Applied Energy Materials

JF - ACS Applied Energy Materials

IS - 11

ER -