Investigating the source of deep-level photoluminescence in ZnO nanorods using optically detected x-ray absorption spectroscopy

Sabina M. Hatch; Andrei Sapelkin; Giannantonio Cibin; Richard Taylor; Andrew Dent; Joe Briscoe; Steve Dunn

doi:10.1063/1.4824810

Investigating the source of deep-level photoluminescence in ZnO nanorods using optically detected x-ray absorption spectroscopy

Sabina M. Hatch, Andrei Sapelkin, Giannantonio Cibin, Richard Taylor, Andrew Dent, Joe Briscoe, Steve Dunn

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A zinc oxide (ZnO) nanorod array exhibiting an intense deep-level emission (DLE) was probed at the Zn K edge (9659 eV) using extended x-ray absorption fine structure (EXAFS) analysis. X-ray excited optical luminescence was used to obtain site-specific information around the absorbing Zn atom using optically detected EXAFS (ODXAS). The visible-emission corresponds to defects in ZnO crystal lattice introduced during growth. A comparative study between red (660 nm) and green (500 nm) DLE was conducted by collecting specific wavelength emissions of the optically detected x-ray absorption spectra. It was shown that red emission primarily originates from the nanorod surface, and green emission was linked to disorder occurring on Zn sites. We show that ODXAS can distinguish between two emission regions and provides a platform to link defect emission with specific crystal structures.

Original language	English
Article number	153517
Journal	Journal of Applied Physics
Volume	114
Issue number	15
DOIs	https://doi.org/10.1063/1.4824810
Publication status	Published - 21 Oct 2013
Externally published	Yes

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10.1063/1.4824810

Cite this

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title = "Investigating the source of deep-level photoluminescence in ZnO nanorods using optically detected x-ray absorption spectroscopy",

abstract = "A zinc oxide (ZnO) nanorod array exhibiting an intense deep-level emission (DLE) was probed at the Zn K edge (9659 eV) using extended x-ray absorption fine structure (EXAFS) analysis. X-ray excited optical luminescence was used to obtain site-specific information around the absorbing Zn atom using optically detected EXAFS (ODXAS). The visible-emission corresponds to defects in ZnO crystal lattice introduced during growth. A comparative study between red (660 nm) and green (500 nm) DLE was conducted by collecting specific wavelength emissions of the optically detected x-ray absorption spectra. It was shown that red emission primarily originates from the nanorod surface, and green emission was linked to disorder occurring on Zn sites. We show that ODXAS can distinguish between two emission regions and provides a platform to link defect emission with specific crystal structures.",

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T1 - Investigating the source of deep-level photoluminescence in ZnO nanorods using optically detected x-ray absorption spectroscopy

AU - Hatch, Sabina M.

AU - Sapelkin, Andrei

AU - Cibin, Giannantonio

AU - Taylor, Richard

AU - Dent, Andrew

AU - Briscoe, Joe

AU - Dunn, Steve

PY - 2013/10/21

Y1 - 2013/10/21

N2 - A zinc oxide (ZnO) nanorod array exhibiting an intense deep-level emission (DLE) was probed at the Zn K edge (9659 eV) using extended x-ray absorption fine structure (EXAFS) analysis. X-ray excited optical luminescence was used to obtain site-specific information around the absorbing Zn atom using optically detected EXAFS (ODXAS). The visible-emission corresponds to defects in ZnO crystal lattice introduced during growth. A comparative study between red (660 nm) and green (500 nm) DLE was conducted by collecting specific wavelength emissions of the optically detected x-ray absorption spectra. It was shown that red emission primarily originates from the nanorod surface, and green emission was linked to disorder occurring on Zn sites. We show that ODXAS can distinguish between two emission regions and provides a platform to link defect emission with specific crystal structures.

AB - A zinc oxide (ZnO) nanorod array exhibiting an intense deep-level emission (DLE) was probed at the Zn K edge (9659 eV) using extended x-ray absorption fine structure (EXAFS) analysis. X-ray excited optical luminescence was used to obtain site-specific information around the absorbing Zn atom using optically detected EXAFS (ODXAS). The visible-emission corresponds to defects in ZnO crystal lattice introduced during growth. A comparative study between red (660 nm) and green (500 nm) DLE was conducted by collecting specific wavelength emissions of the optically detected x-ray absorption spectra. It was shown that red emission primarily originates from the nanorod surface, and green emission was linked to disorder occurring on Zn sites. We show that ODXAS can distinguish between two emission regions and provides a platform to link defect emission with specific crystal structures.

U2 - 10.1063/1.4824810

DO - 10.1063/1.4824810

M3 - Article

AN - SCOPUS:84886508959

SN - 0021-8979

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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