n-Type conducting P doped ZnO thin films via chemical vapor deposition

D. Zhao; J. Li; S. Sathasivam; C.J. Carmalt

doi:10.1039/d0ra05667g

n-Type conducting P doped ZnO thin films via chemical vapor deposition

D. Zhao, J. Li, S. Sathasivam, C.J. Carmalt

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Extrinsically doped ZnO thin films are of interest due to their high electrical conductivity and transparency to visible light. In this study, P doped ZnO thin films were grown on glass substratesviaaerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in the V+ oxidation state and is able to reduce resistivity to 6.0 × 10 ⁻³Ω cm while maintaining visible light transmittance at ∼75%. The thins films were characterized by X-ray diffraction studies that showed only Bragg peaks for the wurtzite ZnO phase.

Original language	English
Pages (from-to)	34527-34533
Number of pages	7
Journal	RSC Advances
Volume	10
Issue number	57
DOIs	https://doi.org/10.1039/d0ra05667g
Publication status	Published - 17 Sept 2020

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10.1039/d0ra05667g

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Cite this

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title = "n-Type conducting P doped ZnO thin films via chemical vapor deposition",

abstract = "Extrinsically doped ZnO thin films are of interest due to their high electrical conductivity and transparency to visible light. In this study, P doped ZnO thin films were grown on glass substratesviaaerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in the V+ oxidation state and is able to reduce resistivity to 6.0 × 10 −3Ω cm while maintaining visible light transmittance at ∼75\%. The thins films were characterized by X-ray diffraction studies that showed only Bragg peaks for the wurtzite ZnO phase.",

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AU - Li, J.

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AB - Extrinsically doped ZnO thin films are of interest due to their high electrical conductivity and transparency to visible light. In this study, P doped ZnO thin films were grown on glass substratesviaaerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in the V+ oxidation state and is able to reduce resistivity to 6.0 × 10 −3Ω cm while maintaining visible light transmittance at ∼75%. The thins films were characterized by X-ray diffraction studies that showed only Bragg peaks for the wurtzite ZnO phase.

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