n-Type conducting P doped ZnO thin films via chemical vapor deposition

Donglei Zhao; Jianwei Li; Sanjayan Sathasivam; Claire J. Carmalt

doi:10.1039/d0ra05667g

n-Type conducting P doped ZnO thin films via chemical vapor deposition

Donglei Zhao
, Jianwei Li
, Sanjayan Sathasivam
, Claire J. Carmalt

University College London
Christopher Ingold Laboratories

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

1 Downloads (Pure)

Abstract

Extrinsically doped ZnO thin films are of interest due to their high electrical conductivity and transparency to visible light. In this study, P doped ZnO thin films were grown on glass substratesviaaerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in the V+ oxidation state and is able to reduce resistivity to 6.0 × 10 ⁻³Ω cm while maintaining visible light transmittance at ∼75%. The thins films were characterized by X-ray diffraction studies that showed only Bragg peaks for the wurtzite ZnO phase.

Original language	English
Pages (from-to)	34527-34533
Number of pages	7
Journal	RSC Advances
Volume	10
Issue number	57
DOIs	https://doi.org/10.1039/d0ra05667g
Publication status	Published - 17 Sept 2020
Externally published	Yes

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry 2020.

Access to Document

10.1039/d0ra05667g

d0ra05667gFinal published version, 820 KBLicence: CC BY 4.0

Cite this

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title = "n-Type conducting P doped ZnO thin films via chemical vapor deposition",

abstract = "Extrinsically doped ZnO thin films are of interest due to their high electrical conductivity and transparency to visible light. In this study, P doped ZnO thin films were grown on glass substratesviaaerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in the V+ oxidation state and is able to reduce resistivity to 6.0 × 10 −3Ω cm while maintaining visible light transmittance at ∼75\%. The thins films were characterized by X-ray diffraction studies that showed only Bragg peaks for the wurtzite ZnO phase.",

author = "Donglei Zhao and Jianwei Li and Sanjayan Sathasivam and Carmalt, \{Claire J.\}",

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AU - Zhao, Donglei

AU - Li, Jianwei

AU - Sathasivam, Sanjayan

AU - Carmalt, Claire J.

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Y1 - 2020/9/17

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AB - Extrinsically doped ZnO thin films are of interest due to their high electrical conductivity and transparency to visible light. In this study, P doped ZnO thin films were grown on glass substratesviaaerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in the V+ oxidation state and is able to reduce resistivity to 6.0 × 10 −3Ω cm while maintaining visible light transmittance at ∼75%. The thins films were characterized by X-ray diffraction studies that showed only Bragg peaks for the wurtzite ZnO phase.

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DO - 10.1039/d0ra05667g

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