Single Step Solution Processed GaAs Thin Films from GaMe3 and tBuAsH2 under Ambient Pressure

Sanjayan Sathasivam; Ranga R. Arnepalli; Davinder S. Bhachu; Yao Lu; John Buckeridge; David O. Scanlon; Bhaskar Kumar; Kaushal K. Singh; Robert J. Visser; Christopher S. Blackman; Claire J. Carmalt

doi:10.1021/acs.jpcc.6b00850

Single Step Solution Processed GaAs Thin Films from GaMe3 and tBuAsH2 under Ambient Pressure

Sanjayan Sathasivam, Ranga R. Arnepalli, Davinder S. Bhachu, Yao Lu, John Buckeridge, David O. Scanlon, Bhaskar Kumar, Kaushal K. Singh, Robert J. Visser, Christopher S. Blackman, Claire J. Carmalt

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11 Citations (Scopus)

Abstract

This article reports on the possibility of low-cost GaAs formed under ambient pressure via a single step solution processed route from only readily available precursors, tBuAsH2 and GaMe3. The thin films of GaAs on glass substrates were found to have good crystallinity with crystallites as large as 150 nm and low contamination with experimental results matching well with theoretical density of states calculations. These results open up a route to efficient and cost-effective scale up of GaAs thin films with high material properties for widespread industrial use. Confirmation of film quality was determined using XRD, Raman, EDX mapping, SEM, HRTEM, XPS, and SIMS.

Original language	English
Pages (from-to)	7013-7019
Number of pages	7
Journal	The Journal of Physical Chemistry C
Volume	120
Issue number	13
DOIs	https://doi.org/10.1021/acs.jpcc.6b00850 https://doi.org/10.1021/acs.jpcc.6b00850
Publication status	Published - 7 Apr 2016
Externally published	Yes

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Publisher Copyright:
© 2016 American Chemical Society.

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Sathasivam, S., Arnepalli, R. R., Bhachu, D. S., Lu, Y., Buckeridge, J., Scanlon, D. O., Kumar, B., Singh, K. K., Visser, R. J., Blackman, C. S., & Carmalt, C. J. (2016). Single Step Solution Processed GaAs Thin Films from GaMe3 and tBuAsH2 under Ambient Pressure. The Journal of Physical Chemistry C, 120(13), 7013-7019. https://doi.org/10.1021/acs.jpcc.6b00850, https://doi.org/10.1021/acs.jpcc.6b00850

@article{85a5979cb09a433f9c63c08ebabd1c4f,

title = "Single Step Solution Processed GaAs Thin Films from GaMe3 and tBuAsH2 under Ambient Pressure",

abstract = "This article reports on the possibility of low-cost GaAs formed under ambient pressure via a single step solution processed route from only readily available precursors, tBuAsH2 and GaMe3. The thin films of GaAs on glass substrates were found to have good crystallinity with crystallites as large as 150 nm and low contamination with experimental results matching well with theoretical density of states calculations. These results open up a route to efficient and cost-effective scale up of GaAs thin films with high material properties for widespread industrial use. Confirmation of film quality was determined using XRD, Raman, EDX mapping, SEM, HRTEM, XPS, and SIMS.",

author = "Sanjayan Sathasivam and Arnepalli, {Ranga R.} and Bhachu, {Davinder S.} and Yao Lu and John Buckeridge and Scanlon, {David O.} and Bhaskar Kumar and Singh, {Kaushal K.} and Visser, {Robert J.} and Blackman, {Christopher S.} and Carmalt, {Claire J.}",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

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day = "7",

doi = "10.1021/acs.jpcc.6b00850",

language = "English",

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Sathasivam, S, Arnepalli, RR, Bhachu, DS, Lu, Y, Buckeridge, J, Scanlon, DO, Kumar, B, Singh, KK, Visser, RJ, Blackman, CS & Carmalt, CJ 2016, 'Single Step Solution Processed GaAs Thin Films from GaMe3 and tBuAsH2 under Ambient Pressure', The Journal of Physical Chemistry C, vol. 120, no. 13, pp. 7013-7019. https://doi.org/10.1021/acs.jpcc.6b00850, https://doi.org/10.1021/acs.jpcc.6b00850

TY - JOUR

T1 - Single Step Solution Processed GaAs Thin Films from GaMe3 and tBuAsH2 under Ambient Pressure

AU - Sathasivam, Sanjayan

AU - Arnepalli, Ranga R.

AU - Bhachu, Davinder S.

AU - Lu, Yao

AU - Buckeridge, John

AU - Scanlon, David O.

AU - Kumar, Bhaskar

AU - Singh, Kaushal K.

AU - Visser, Robert J.

AU - Blackman, Christopher S.

AU - Carmalt, Claire J.

PY - 2016/4/7

Y1 - 2016/4/7

N2 - This article reports on the possibility of low-cost GaAs formed under ambient pressure via a single step solution processed route from only readily available precursors, tBuAsH2 and GaMe3. The thin films of GaAs on glass substrates were found to have good crystallinity with crystallites as large as 150 nm and low contamination with experimental results matching well with theoretical density of states calculations. These results open up a route to efficient and cost-effective scale up of GaAs thin films with high material properties for widespread industrial use. Confirmation of film quality was determined using XRD, Raman, EDX mapping, SEM, HRTEM, XPS, and SIMS.

AB - This article reports on the possibility of low-cost GaAs formed under ambient pressure via a single step solution processed route from only readily available precursors, tBuAsH2 and GaMe3. The thin films of GaAs on glass substrates were found to have good crystallinity with crystallites as large as 150 nm and low contamination with experimental results matching well with theoretical density of states calculations. These results open up a route to efficient and cost-effective scale up of GaAs thin films with high material properties for widespread industrial use. Confirmation of film quality was determined using XRD, Raman, EDX mapping, SEM, HRTEM, XPS, and SIMS.

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DO - 10.1021/acs.jpcc.6b00850

M3 - Article

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VL - 120

SP - 7013

EP - 7019

JO - The Journal of Physical Chemistry C

JF - The Journal of Physical Chemistry C

IS - 13

ER -

Single Step Solution Processed GaAs Thin Films from GaMe3 and tBuAsH2 under Ambient Pressure

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