TY - JOUR
T1 - Single Step Solution Processed GaAs Thin Films from GaMe3 and tBuAsH2 under Ambient Pressure
AU - Buckeridge, John
PY - 2016/4/7
Y1 - 2016/4/7
N2 - This article reports on the possibility of low-cost GaAs formed under ambient pressure via a single step solution processed route from only readily available precursors, tBuAsH2 and GaMe3. The thin films of GaAs on glass substrates were found to have good crystallinity with crystallites as large as 150 nm and low contamination with experimental results matching well with theoretical density of states calculations. These results open up a route to efficient and cost-effective scale up of GaAs thin films with high material properties for widespread industrial use. Confirmation of film quality was determined using XRD, Raman, EDX mapping, SEM, HRTEM, XPS, and SIMS.
AB - This article reports on the possibility of low-cost GaAs formed under ambient pressure via a single step solution processed route from only readily available precursors, tBuAsH2 and GaMe3. The thin films of GaAs on glass substrates were found to have good crystallinity with crystallites as large as 150 nm and low contamination with experimental results matching well with theoretical density of states calculations. These results open up a route to efficient and cost-effective scale up of GaAs thin films with high material properties for widespread industrial use. Confirmation of film quality was determined using XRD, Raman, EDX mapping, SEM, HRTEM, XPS, and SIMS.
U2 - 10.1021/acs.jpcc.6b00850
DO - 10.1021/acs.jpcc.6b00850
M3 - Article
SP - 7013
EP - 7019
JO - The Journal of Physical Chemistry C
JF - The Journal of Physical Chemistry C
ER -