Tantalum and titanium doped In2O3 thin films by aerosol-assisted chemical vapor deposition and their gas sensing properties

L.G. Bloor; J. Manzi; R. Binions; I.P. Parkin; D. Pugh; A. Afonja; C.S. Blackman; S. Sathasivam; C.J. Carmalt

doi:10.1021/cm300596c

Tantalum and titanium doped In2O3 thin films by aerosol-assisted chemical vapor deposition and their gas sensing properties

L.G. Bloor, J. Manzi, R. Binions, I.P. Parkin, D. Pugh, A. Afonja, C.S. Blackman, S. Sathasivam, C.J. Carmalt

Chemical and Energy Engineering

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

In2O3 and In2O3:M (M = Ti or Ta) thin films were deposited on glass substrates via aerosol-assisted chemical deposition (AACVD) at 450 °C. The resulting films were characterized by a range of techniques including glancing-angle X-ray diffraction, scanning electron microscopy, wavelength dispersive analysis of X-rays, and optical transmission/reflectance studies to investigate the effect of doping on the films. The In2O3:M thin films were found to contain 6.5 and 2.3 at.% of Ti and Ta, respectively. The gas sensing properties were investigated on films deposited onto gas sensing substrates via AACVD. Tantalum doped indium oxide (In2O3:Ta) thin films showed a superior response, compared to In2O3, to a number of reducing gases (ethanol, CO, ammonia) and also the oxidizing gas NO2. Considerable selectivity to ethanol was observed; the greatest gas response (R/R0) was 16.95 to 100 ppm ethanol.

Original language	English
Pages (from-to)	2864–2871
Journal	Chemistry of Materials
Volume	24
Issue number	15
DOIs	https://doi.org/10.1021/cm300596c
Publication status	Published - 27 Jul 2012

Access to Document

10.1021/cm300596c

Cite this

@article{cc107dccbd4e4f5b97a15ef4b5e35e79,

title = "Tantalum and titanium doped In2O3 thin films by aerosol-assisted chemical vapor deposition and their gas sensing properties",

abstract = "In2O3 and In2O3:M (M = Ti or Ta) thin films were deposited on glass substrates via aerosol-assisted chemical deposition (AACVD) at 450 °C. The resulting films were characterized by a range of techniques including glancing-angle X-ray diffraction, scanning electron microscopy, wavelength dispersive analysis of X-rays, and optical transmission/reflectance studies to investigate the effect of doping on the films. The In2O3:M thin films were found to contain 6.5 and 2.3 at.\% of Ti and Ta, respectively. The gas sensing properties were investigated on films deposited onto gas sensing substrates via AACVD. Tantalum doped indium oxide (In2O3:Ta) thin films showed a superior response, compared to In2O3, to a number of reducing gases (ethanol, CO, ammonia) and also the oxidizing gas NO2. Considerable selectivity to ethanol was observed; the greatest gas response (R/R0) was 16.95 to 100 ppm ethanol.",

author = "L.G. Bloor and J. Manzi and R. Binions and I.P. Parkin and D. Pugh and A. Afonja and C.S. Blackman and S. Sathasivam and C.J. Carmalt",

year = "2012",

month = jul,

day = "27",

doi = "10.1021/cm300596c",

language = "English",

volume = "24",

pages = "2864–2871",

journal = "Chemistry of Materials",

issn = "1520-5002",

publisher = "American Chemical Society",

number = "15",

}

TY - JOUR

T1 - Tantalum and titanium doped In2O3 thin films by aerosol-assisted chemical vapor deposition and their gas sensing properties

AU - Bloor, L.G.

AU - Manzi, J.

AU - Binions, R.

AU - Parkin, I.P.

AU - Pugh, D.

AU - Afonja, A.

AU - Blackman, C.S.

AU - Sathasivam, S.

AU - Carmalt, C.J.

PY - 2012/7/27

Y1 - 2012/7/27

N2 - In2O3 and In2O3:M (M = Ti or Ta) thin films were deposited on glass substrates via aerosol-assisted chemical deposition (AACVD) at 450 °C. The resulting films were characterized by a range of techniques including glancing-angle X-ray diffraction, scanning electron microscopy, wavelength dispersive analysis of X-rays, and optical transmission/reflectance studies to investigate the effect of doping on the films. The In2O3:M thin films were found to contain 6.5 and 2.3 at.% of Ti and Ta, respectively. The gas sensing properties were investigated on films deposited onto gas sensing substrates via AACVD. Tantalum doped indium oxide (In2O3:Ta) thin films showed a superior response, compared to In2O3, to a number of reducing gases (ethanol, CO, ammonia) and also the oxidizing gas NO2. Considerable selectivity to ethanol was observed; the greatest gas response (R/R0) was 16.95 to 100 ppm ethanol.

AB - In2O3 and In2O3:M (M = Ti or Ta) thin films were deposited on glass substrates via aerosol-assisted chemical deposition (AACVD) at 450 °C. The resulting films were characterized by a range of techniques including glancing-angle X-ray diffraction, scanning electron microscopy, wavelength dispersive analysis of X-rays, and optical transmission/reflectance studies to investigate the effect of doping on the films. The In2O3:M thin films were found to contain 6.5 and 2.3 at.% of Ti and Ta, respectively. The gas sensing properties were investigated on films deposited onto gas sensing substrates via AACVD. Tantalum doped indium oxide (In2O3:Ta) thin films showed a superior response, compared to In2O3, to a number of reducing gases (ethanol, CO, ammonia) and also the oxidizing gas NO2. Considerable selectivity to ethanol was observed; the greatest gas response (R/R0) was 16.95 to 100 ppm ethanol.

U2 - 10.1021/cm300596c

DO - 10.1021/cm300596c

M3 - Article

SN - 1520-5002

VL - 24

SP - 2864

EP - 2871

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 15

ER -