Tantalum and titanium doped In2O3 thin films by aerosol-assisted chemical vapor deposition and their gas sensing properties

L.G. Bloor; J. Manzi; R. Binions; I.P. Parkin; D. Pugh; A. Afonja; C.S. Blackman; S. Sathasivam; C.J. Carmalt

doi:10.1021/cm300596c

Tantalum and titanium doped In2O3 thin films by aerosol-assisted chemical vapor deposition and their gas sensing properties

L.G. Bloor
, J. Manzi
, R. Binions
, I.P. Parkin
, D. Pugh
, A. Afonja
, C.S. Blackman
, S. Sathasivam
, C.J. Carmalt

Chemical and Energy Engineering

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

In2O3 and In2O3:M (M = Ti or Ta) thin films were deposited on glass substrates via aerosol-assisted chemical deposition (AACVD) at 450 °C. The resulting films were characterized by a range of techniques including glancing-angle X-ray diffraction, scanning electron microscopy, wavelength dispersive analysis of X-rays, and optical transmission/reflectance studies to investigate the effect of doping on the films. The In2O3:M thin films were found to contain 6.5 and 2.3 at.% of Ti and Ta, respectively. The gas sensing properties were investigated on films deposited onto gas sensing substrates via AACVD. Tantalum doped indium oxide (In2O3:Ta) thin films showed a superior response, compared to In2O3, to a number of reducing gases (ethanol, CO, ammonia) and also the oxidizing gas NO2. Considerable selectivity to ethanol was observed; the greatest gas response (R/R0) was 16.95 to 100 ppm ethanol.

Original language	English
Pages (from-to)	2864–2871
Journal	Chemistry of Materials
Volume	24
Issue number	15
DOIs	https://doi.org/10.1021/cm300596c
Publication status	Published - 27 Jul 2012

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10.1021/cm300596c

Cite this

@article{cc107dccbd4e4f5b97a15ef4b5e35e79,

title = "Tantalum and titanium doped In2O3 thin films by aerosol-assisted chemical vapor deposition and their gas sensing properties",

abstract = "In2O3 and In2O3:M (M = Ti or Ta) thin films were deposited on glass substrates via aerosol-assisted chemical deposition (AACVD) at 450 °C. The resulting films were characterized by a range of techniques including glancing-angle X-ray diffraction, scanning electron microscopy, wavelength dispersive analysis of X-rays, and optical transmission/reflectance studies to investigate the effect of doping on the films. The In2O3:M thin films were found to contain 6.5 and 2.3 at.\% of Ti and Ta, respectively. The gas sensing properties were investigated on films deposited onto gas sensing substrates via AACVD. Tantalum doped indium oxide (In2O3:Ta) thin films showed a superior response, compared to In2O3, to a number of reducing gases (ethanol, CO, ammonia) and also the oxidizing gas NO2. Considerable selectivity to ethanol was observed; the greatest gas response (R/R0) was 16.95 to 100 ppm ethanol.",

author = "L.G. Bloor and J. Manzi and R. Binions and I.P. Parkin and D. Pugh and A. Afonja and C.S. Blackman and S. Sathasivam and C.J. Carmalt",

year = "2012",

month = jul,

day = "27",

doi = "10.1021/cm300596c",

language = "English",

volume = "24",

pages = "2864–2871",

journal = "Chemistry of Materials",

issn = "1520-5002",

publisher = "American Chemical Society",

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TY - JOUR

T1 - Tantalum and titanium doped In2O3 thin films by aerosol-assisted chemical vapor deposition and their gas sensing properties

AU - Bloor, L.G.

AU - Manzi, J.

AU - Binions, R.

AU - Parkin, I.P.

AU - Pugh, D.

AU - Afonja, A.

AU - Blackman, C.S.

AU - Sathasivam, S.

AU - Carmalt, C.J.

PY - 2012/7/27

Y1 - 2012/7/27

N2 - In2O3 and In2O3:M (M = Ti or Ta) thin films were deposited on glass substrates via aerosol-assisted chemical deposition (AACVD) at 450 °C. The resulting films were characterized by a range of techniques including glancing-angle X-ray diffraction, scanning electron microscopy, wavelength dispersive analysis of X-rays, and optical transmission/reflectance studies to investigate the effect of doping on the films. The In2O3:M thin films were found to contain 6.5 and 2.3 at.% of Ti and Ta, respectively. The gas sensing properties were investigated on films deposited onto gas sensing substrates via AACVD. Tantalum doped indium oxide (In2O3:Ta) thin films showed a superior response, compared to In2O3, to a number of reducing gases (ethanol, CO, ammonia) and also the oxidizing gas NO2. Considerable selectivity to ethanol was observed; the greatest gas response (R/R0) was 16.95 to 100 ppm ethanol.

AB - In2O3 and In2O3:M (M = Ti or Ta) thin films were deposited on glass substrates via aerosol-assisted chemical deposition (AACVD) at 450 °C. The resulting films were characterized by a range of techniques including glancing-angle X-ray diffraction, scanning electron microscopy, wavelength dispersive analysis of X-rays, and optical transmission/reflectance studies to investigate the effect of doping on the films. The In2O3:M thin films were found to contain 6.5 and 2.3 at.% of Ti and Ta, respectively. The gas sensing properties were investigated on films deposited onto gas sensing substrates via AACVD. Tantalum doped indium oxide (In2O3:Ta) thin films showed a superior response, compared to In2O3, to a number of reducing gases (ethanol, CO, ammonia) and also the oxidizing gas NO2. Considerable selectivity to ethanol was observed; the greatest gas response (R/R0) was 16.95 to 100 ppm ethanol.

U2 - 10.1021/cm300596c

DO - 10.1021/cm300596c

M3 - Article

SN - 1520-5002

VL - 24

SP - 2864

EP - 2871

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 15

ER -