The Effect of Process Parameters of Plasma Sulphurisation on the Morphology of CZT Precursors

We present the characterisation of thin film binary, ternary & quaternary compounds which have been grown via the plasma sulphurisation of metallic precursor stacks using the ECR CVD. This method of deposition is a low pressure technique which utilises a microwave plasma discharge with SF6 as a precursor gas. Raman results reveal peaks associated with quaternary compounds comprising of distinctively arranged cation layers at processing temperature below 400C. SEM images reveal that a range of different types of structures were synthesised. Our work paves the way to the potential fabrication of thin film kesterite-based solar cells at low processing temperatures via the plasma sulphurisation of alloys of earth abundant materials.