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The Effect of Process Parameters of Plasma Sulphurisation on the Morphology of CZT Precursors
Jeremy Ball
, A Hasnath
, HS Reehal
Electrical and Electronic Engineering (302)
Research output
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Contribution to conference
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Paper
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peer-review
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Keyphrases
Sulphurisation
100%
Process Parameters Influence
100%
Quaternary Compounds
66%
Plasma Discharge
33%
Processing Temperature
33%
Precursor Gases
33%
Solar Cell
33%
Earth-abundant Materials
33%
Kesterite
33%
Metallic Precursor
33%
Low Pressure
33%
Low Temperature Process
33%
Pressure-based Method
33%
SEM Images
33%
Binary Compounds
33%
Microwave Plasma
33%
Ternary Compound
33%
ECR-PEMOCVD
33%
Engineering
Thin Films
100%
Process Parameter
100%
Pressure Technique
50%
Chemical Vapor Deposition
50%
Microwave Plasma
50%
Based Solar Cell
50%
Physics
Blood Plasma
100%
Thin Films
66%
Solar Cell
33%
Plasma Jet
33%
Electron Cyclotron Resonance
33%
Scanning Electron Microscopy
33%
Material Science
Thin Films
100%
Solar Cell
50%
Scanning Electron Microscopy
50%
Chemical Vapor Deposition
50%