Abstract
Extrinsically doped ZnO is widely used as a transparent conducting electrode and has the potential to alleviate the demand on the expensive but ubiquitous Sn-doped In 2O 3. Here, we report for the first time the synthesis and characterization of molybdenum-doped ZnO via a chemical vapor deposition route. Films were grown by using diethylzinc, molybdenum hexacarbonyl, toluene, and methanol. All films had visible light transmittance of ∼80% and electrical resistivity of 10 −3 Ω·cm with the lowest resistivity of 2.6 × 10 −3 Ω·cm observed for the 0.57 at. % Mo-doped film. X-ray photoelectron spectroscopy of the surface species and X-ray diffraction based calculations of the ZnO unit cell parameters suggest that Mo is present in the 4+ oxidation state, thus contributing two electrons for electrical conduction for every Zn 2+ ion replaced in the lattice.
| Original language | English |
|---|---|
| Pages (from-to) | 120-125 |
| Number of pages | 6 |
| Journal | ACS Applied Electronic Materials |
| Volume | 2 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 28 Jan 2020 |
Keywords
- Cation doping
- Chemical vapor deposition
- Thin films
- Transparent conducting oxides
- Zinc oxide