TY - JOUR
T1 - Vibrational mode shifts as a measure of local strain in the dilute nitride semiconductor alloy GaNx As1-x
AU - Buckeridge, J.
AU - Teweldeberhan, A. M.
AU - Fahy, S.
PY - 2009/4/1
Y1 - 2009/4/1
N2 - The effect of an applied strain on the frequency of the localized vibrational mode associated with substitutional nitrogen in the dilute nitride GaNx As1-x is calculated within first-principles density-functional theory, using a supercell approach. Calculated values of the deformation potentials of frequency of the localized nitrogen vibration mode for each irreducible component of the local strain are as follows: (Γ1 representation) a=-1907 cm-1, (Γ3 representation) b=22 cm-1, (Γ4 representation) d=-741 cm-1.
AB - The effect of an applied strain on the frequency of the localized vibrational mode associated with substitutional nitrogen in the dilute nitride GaNx As1-x is calculated within first-principles density-functional theory, using a supercell approach. Calculated values of the deformation potentials of frequency of the localized nitrogen vibration mode for each irreducible component of the local strain are as follows: (Γ1 representation) a=-1907 cm-1, (Γ3 representation) b=22 cm-1, (Γ4 representation) d=-741 cm-1.
UR - http://www.scopus.com/inward/record.url?scp=66049139115&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.79.153201
DO - 10.1103/PhysRevB.79.153201
M3 - Article
AN - SCOPUS:66049139115
SN - 1098-0121
VL - 79
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 15
M1 - 153201
ER -