ZnO nanorods-a backbone for PV's

Joe Briscoe; Diego E. Gallardo; Steve Dunn

doi:10.1080/00150193.2011.594771

ZnO nanorods-a backbone for PV's

Joe Briscoe, Diego E. Gallardo, Steve Dunn

Research output: Contribution to journal › Article › peer-review

Abstract

Conformal coating of ZnO nanorods with CdTe nanoparticles using layer-by-layer (LbL) processing produces a quantum dot-sensitised solar cell. Filling of the semiconductor composite structure with CuSCN provides the solar cell with a p-type semiconductor to collect the photogenerated holes. Annealing the CdTe-polymer coated nanorods lowers the series resistance of the cell by removing the polymer component of the film. A cell annealed at 350°C has a J _sc of 0.12 mAcm ^-2, and a V _oc of 49 mV under 0.25 mW/cm ² illumination.

Original language	English
Pages (from-to)	19-24
Number of pages	6
Journal	Ferroelectrics
Volume	420
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2011.594771
Publication status	Published - 13 Oct 2011
Externally published	Yes

Keywords

Layer-by-layer
Nanorods
ZnO

Access to Document

10.1080/00150193.2011.594771

Cite this

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title = "ZnO nanorods-a backbone for PV's",

abstract = "Conformal coating of ZnO nanorods with CdTe nanoparticles using layer-by-layer (LbL) processing produces a quantum dot-sensitised solar cell. Filling of the semiconductor composite structure with CuSCN provides the solar cell with a p-type semiconductor to collect the photogenerated holes. Annealing the CdTe-polymer coated nanorods lowers the series resistance of the cell by removing the polymer component of the film. A cell annealed at 350°C has a J sc of 0.12 mAcm -2, and a V oc of 49 mV under 0.25 mW/cm 2 illumination.",

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AB - Conformal coating of ZnO nanorods with CdTe nanoparticles using layer-by-layer (LbL) processing produces a quantum dot-sensitised solar cell. Filling of the semiconductor composite structure with CuSCN provides the solar cell with a p-type semiconductor to collect the photogenerated holes. Annealing the CdTe-polymer coated nanorods lowers the series resistance of the cell by removing the polymer component of the film. A cell annealed at 350°C has a J sc of 0.12 mAcm -2, and a V oc of 49 mV under 0.25 mW/cm 2 illumination.

KW - Layer-by-layer

KW - Nanorods

KW - ZnO

U2 - 10.1080/00150193.2011.594771

DO - 10.1080/00150193.2011.594771

M3 - Article

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