ZnO nanostructured diodes: The influence of synthesis conditions and p-type material on device performance

S. M. Hatch, S. Dunn

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We produce four distinct ZnO nanorod diode structures that are based on ZnO nanorods produced at pH 6 and pH 11 and have the p-type material PEDOT:PSS (hybrid device) or CuSCN (all inorganic device). After testing the performance of the diodes we show a rectification of 1050 at ±1V in the dark for the inorganic device. The device also exhibits good UV photodetection showing a rapid ca 0.1ms turn on and off to a source of illumination. The hybrid devices performed as previously reported with a rectification of 25 at ±1V in both dark and under illumination. We ascribe the performance of the devices to the differences in morphology in the ZnO brought about by the processing conditions and the way in which the p-type layer coats the nanostructure.

Original languageEnglish
Title of host publicationNanowires and Nanotubes - Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials
Pages95-100
Number of pages6
DOIs
Publication statusPublished - 1 Apr 2012
Externally publishedYes
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: 9 Apr 201213 Apr 2012

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1439
ISSN (Print)0272-9172

Conference

Conference2012 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period9/04/1213/04/12

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